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KMM5362205C2W - DRAM MODULE

Datasheet Summary

Description

The Samsung KMM5362205C2W is a 2Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5362205C2W consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package and two CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - KMM5362205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5362205C2WG(1024 cycles/16ms Ref, SOJ, Gold).
  • Fast Page Mode with Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDPin & pinout.
  • PCB : Height(750mil), double sided component.

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Datasheet preview – KMM5362205C2W

Datasheet Details

Part number KMM5362205C2W
Manufacturer Samsung Semiconductor
File Size 285.03 KB
Description DRAM MODULE
Datasheet download datasheet KMM5362205C2W Datasheet
Additional preview pages of the KMM5362205C2W datasheet.

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Full PDF Text Transcription

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DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM (1MX16 Base, Quad CAS EDO) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5362205C2W/C2WG • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG KMM5362205C2W/C2WG Fast Page Mode with Extended Data Out 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, GENERAL DESCRIPTION The Samsung KMM5362205C2W is a 2Mx36bits Dynamic RAM high density memory module.
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