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KMM5362205C2W - DRAM MODULE

General Description

The Samsung KMM5362205C2W is a 2Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5362205C2W consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package and two CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

Key Features

  • Part Identification - KMM5362205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5362205C2WG(1024 cycles/16ms Ref, SOJ, Gold).
  • Fast Page Mode with Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDPin & pinout.
  • PCB : Height(750mil), double sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM5362203C2W DRAM MODULE
KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
KMM5361205C2W 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
KMM53616000BK 16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
KMM53616000CK DRAM MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM (1MX16 Base, Quad CAS EDO) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5362205C2W/C2WG • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG KMM5362205C2W/C2WG Fast Page Mode with Extended Data Out 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, GENERAL DESCRIPTION The Samsung KMM5362205C2W is a 2Mx36bits Dynamic RAM high density memory module.