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KMM5364003BSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4

General Description

The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5364003B consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

Key Features

  • Part Identification - KMM5364003BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364003BSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), single sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM5364003CK (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
KMM5364003CSW 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4
KMM5364005BSW 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
KMM5364005CK (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
KMM5364005CSW 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
KMM5364103CK (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
KMM5364105CK (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
KMM5361205C2W 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
KMM53616000BK 16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.