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KMM5364003BSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4

Datasheet Summary

Description

The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5364003B consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - KMM5364003BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364003BSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), single sided component.

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Datasheet Details

Part number KMM5364003BSW
Manufacturer Samsung Semiconductor
File Size 351.92 KB
Description 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
Datasheet download datasheet KMM5364003BSW Datasheet
Additional preview pages of the KMM5364003BSW datasheet.

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Full PDF Text Transcription

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DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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