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KMM5364005CSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4

Datasheet Summary

Description

The Samsung KMM5364005C is a 4Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5364005C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - KMM5364005CSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364005CSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), single sided component.

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Datasheet Details

Part number KMM5364005CSW
Manufacturer Samsung Semiconductor
File Size 415.01 KB
Description 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
Datasheet download datasheet KMM5364005CSW Datasheet
Additional preview pages of the KMM5364005CSW datasheet.

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Full PDF Text Transcription

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DRAM MODULE KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM (4Mx16 & Quad CAS 4Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364005CSW/CSWG DRAM MODULE KMM5364005CSW/CSWG KMM5364005CSW/CSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5364005C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
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