Datasheet4U Logo Datasheet4U.com

KMM5364005CK - (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas

This page provides the datasheet information for the KMM5364005CK, a member of the KMM5364105CK (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas family.

Datasheet Summary

Description

The Samsung KMM53640(1)05CK is a 4Mx36bits Dynamic RAM high density memory module.

The Samsung KMM53640(1)05CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS with EDO DRAM in 28-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - KMM5364005CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5364005CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5364105CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5364105CKG(2048 cycles/32ms Ref, SOJ, Gold).
  • Fast Page Mode with Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and Hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDPin & pinout.

📥 Download Datasheet

Datasheet preview – KMM5364005CK

Datasheet Details

Part number KMM5364005CK
Manufacturer Samsung Semiconductor
File Size 265.91 KB
Description (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
Datasheet download datasheet KMM5364005CK Datasheet
Additional preview pages of the KMM5364005CK datasheet.

📁 Similar Datasheet

  • KMM5362000A1 - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362000A1G - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362000B - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362000B2 - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362000B2G - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362000BG - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362000BH - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362003 - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5362003G - 2M x 36 DRAM SIMM Memory Module (Samsung Electronics)
  • KMM5.1 - (KMM1 - KMM72) SILICON PLANAR ZENER DIODES (TY Semiconductor)
Other Datasheets by Samsung Semiconductor
  • KMM5364005CSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
  • KMM5364005BSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
  • KMM5364003BSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
  • KMM5364003CK - (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
  • KMM5364003CSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4
  • KMM5364103CK - (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
  • KMM5364105CK - (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
  • KMM5361203C2W - 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas

Full PDF Text Transcription

Click to expand full text
DRAM MODULE KMM5364005CK/CKG KMM5364105CK/CKG KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53640(1)05CK is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM53640(1)05CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS with EDO DRAM in 28-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53640(1)05CK is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
Published: |