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M366S0824CTL - SDRAM DIMM

General Description

The Samsung M366S0824CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S0824CTL consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Key Features

  • Active standby current in power-down mode ICC3P ICC3PS ICC3N ICC3NS mA 48 16 16 160 80 380 mA 360 1,000 8 mA mA 2 1 mA mA mA Active standby current in non power-down mode (One bank active) O.

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Full PDF Text Transcription for M366S0824CTL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M366S0824CTL. For precise diagrams, and layout, please refer to the original PDF.

M366S0824CTL M366S0824CTL SDRAM DIMM PC66 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Sam...

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K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0824CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0824CTL consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF decoupling capacitors are mounted on www.DataSheet4U.com the printed circuit board in parallel for each SDRAM. The M366S0824CTL is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle contr

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