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M366S0824ET0 - SDRAM DIMM

Description

The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S0824ET0 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • C6 600 8 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Rev. 0.0 Nov. 2000 M366.

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Datasheet Details

Part number M366S0824ET0
Manufacturer Samsung
File Size 133.48 KB
Description SDRAM DIMM
Datasheet download datasheet M366S0824ET0 Datasheet
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M366S0824ET0 M366S0824ET0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0824ET0 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the www.DataSheet4U.com printed circuit board in parallel for each SDRAM. The M366S0824ET0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.
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