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M366S0824DT0 - SDRAM DIMM

General Description

The Samsung M366S0824DT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S0824DT0 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Key Features

  • t (Burst mode) Refresh current Self refresh current ICC4 620 540 540 mA 1 ICC5 ICC6 620 600 8 600 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Un.

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Full PDF Text Transcription for M366S0824DT0 (Reference)

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M366S0824DT0 M366S0824DT0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Sa...

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4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0824DT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0824DT0 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the www.DataSheet4U.com printed circuit board in parallel for each SDRAM. The M366S0824DT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle contr

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