Datasheet4U Logo Datasheet4U.com

K4H560838F-TCC4 Datasheet 256mb F-die Ddr400 Sdram Specification

Manufacturer: Samsung Semiconductor

Overview: DDR SDRAM 256Mb F-die (x8, x16) DDR SDRAM 256Mb F-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) 256Mb F-die Revision History Revison 1.0 (June. 2003) 1. First release Revison 1.1 (August. 2003) 1. Added x8 org (K4H560838F) DDR SDRAM Rev. 1.1 August.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 2

Key Features

  • 200MHz Clock, 400Mbps data rate.
  • VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (s.

More Datasheets from Samsung Semiconductor

Part Number Description
K4H560838F-TCCC 256Mb F-die DDR400 SDRAM Specification
K4H560838F-TC DDR SDRAM 256Mb F-die
K4H560838F-UCC4 256Mb F-die DDR400 SDRAM
K4H560838F-UCCC 256Mb F-die DDR400 SDRAM
K4H560838D-TCB3 256Mb D-die DDR Sdram
K4H560838H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560838J 256Mb J-die DDR SDRAM Specification
K4H560438D-TCB3 256Mb D-die DDR Sdram
K4H560438H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J 256Mb J-die DDR SDRAM Specification

K4H560838F-TCC4 Distributor