K4M51323PC Datasheet (Mobile-SDRAM) | Samsung Semiconductor

Part: K4M51323PC
Manufacturer: Samsung Semiconductor
Size: 170.41 KB

K4M51323PC Key Features

1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS cycle with address key programs. -
EMRS cycle with address key programs
All inputs are sampled at the positive going edge of the system clock
Burst read single-bit write operation
Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) -.
DQM for masking
Auto refresh
64ms refresh period (8K cycle)
Extended Temperature Operation (-25°C ~ 85°C)
mercial Temperature Operation (-25°C ~ 70°C)

Other K4M51323PC Datasheets

Manufacturer	Part Number	Description
Samsung Semiconductor	K4M513233E	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Samsung Semiconductor	K4M513233E-F1H	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Samsung Semiconductor	K4M513233E-F1L	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Samsung Semiconductor	K4M513233E-F75	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Samsung Semiconductor	K4M513233E-L	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M51323PC Description

The K4M51323PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device...