K4R881869D - 256/288Mbit RDRAM(D-die)

Datasheet Summary

Description

Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Features

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

Samsung semiconductor

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Datasheet Details

Part number	K4R881869D
Manufacturer	Samsung semiconductor
File Size	311.97 KB
Description	256/288Mbit RDRAM(D-die)
Datasheet	K4R881869D Datasheet
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Full PDF Text Transcription

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K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D/K4R881869D Change History Direct RDRAM™ Version 1.4( July 2002) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb A-die RDRAM Version 1.4 Page 0 Version 1.4 July 2002 K4R571669D/K4R881869D Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

Published: Apr 7, 2005 |