K4R881869D Datasheet | Samsung Semiconductor

Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including puter memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to 0.938ns per two bytes (7.5ns per sixteen bytes). The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 230 K4RXXXX69D-Fxxx Figure 1: Direct RDRAM CSP Package The 256/288-Mbit RDRAM devices are offered in a CSP horizontal package suitable for desktop as well as lowprofile add-in card and mobile applications. Key Timing Parameters/Part Numbers Speed Organization Bin I/O Freq. MHz 1066 1066 1066 800 800 1066 1066 1066 800 800 t RAC (Row Access Time) ns 32P 32 35 40 45 32P 32 35 40 45 Features - Highest sustained bandwidth per DRAM device Part Number - 2.1GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simultaneously at full bandwidth data rates - Low latency features -CT9 -CN9 512Kx16x32sa...