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K4S280432E

K4S280432E is 128Mb E-die SDRAM Specification manufactured by Samsung Semiconductor.
K4S280432E datasheet preview

K4S280432E Datasheet

Part number K4S280432E
Download K4S280432E Datasheet (PDF)
File Size 144.28 KB
Manufacturer Samsung Semiconductor
Description 128Mb E-die SDRAM Specification
K4S280432E page 2 K4S280432E page 3

Related Samsung Semiconductor Datasheets

Part Number Description
K4S280432E-TC75 128Mb E-die SDRAM Specification
K4S280432E-TL75 128Mb E-die SDRAM Specification
K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

K4S280432E Distributor

K4S280432E Description

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S280432E Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & In
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for maskin
  • Auto & self refresh
  • 64ms refresh period (4K Cycle)

K4S280432E Applications

  • Samsung Electronics reserves the right to change products or specification without notice

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