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K4S280432B

Manufacturer: Samsung Semiconductor

K4S280432B datasheet by Samsung Semiconductor.

K4S280432B datasheet preview

K4S280432B Datasheet Details

Part number K4S280432B
Datasheet K4S280432B_Samsungsemiconductor.pdf
File Size 109.58 KB
Manufacturer Samsung Semiconductor
Description 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432B page 2 K4S280432B page 3

K4S280432B Overview

The K4S280432B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be...

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Part Number Description
K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432D 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432E 128Mb E-die SDRAM Specification
K4S280432E-TC75 128Mb E-die SDRAM Specification
K4S280432E-TL75 128Mb E-die SDRAM Specification
K4S280432F 128Mb F-die SDRAM Specification
K4S280432F-TC75 128Mb F-die SDRAM Specification
K4S280432F-TL75 128Mb F-die SDRAM Specification
K4S280432F-UC75 128Mb F-die SDRAM

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