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K4S280432B Datasheet 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl

Manufacturer: Samsung Semiconductor

Overview: K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug.

General Description

The K4S280432B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 Page ) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432D 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432E 128Mb E-die SDRAM Specification
K4S280432E-TC75 128Mb E-die SDRAM Specification
K4S280432E-TL75 128Mb E-die SDRAM Specification
K4S280432F 128Mb F-die SDRAM Specification
K4S280432F-TC75 128Mb F-die SDRAM Specification
K4S280432F-TL75 128Mb F-die SDRAM Specification
K4S280432F-UC75 128Mb F-die SDRAM

K4S280432B Distributor