K4S280432B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S280432B
Manufacturer	Samsung semiconductor
File Size	109.58 KB
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S280432B Datasheet
Additional preview pages of the K4S280432B datasheet.

Product details

Description

The K4S280432B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 Page ) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432D - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432E - 128Mb E-die SDRAM Specification
K4S280432E-TC75 - 128Mb E-die SDRAM Specification
K4S280432E-TL75 - 128Mb E-die SDRAM Specification

Published: Apr 7, 2005 |