K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

This page provides the datasheet information for the K4S280432A, a member of the K4S-280432 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S280432A
Manufacturer	Samsung semiconductor
File Size	109.52 KB
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S280432A Datasheet
Additional preview pages of the K4S280432A datasheet.

K4S280432A Product details

Description

The K4S280432A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S280432B - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432D - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432E - 128Mb E-die SDRAM Specification
K4S280432E-TC75 - 128Mb E-die SDRAM Specification
K4S280432E-TL75 - 128Mb E-die SDRAM Specification
K4S280432F - 128Mb F-die SDRAM Specification
K4S280432F-TC75 - 128Mb F-die SDRAM Specification

Published: Apr 7, 2005 |