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K4S561632A Datasheet 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl

Manufacturer: Samsung Semiconductor

Overview: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep.

General Description

The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle.

Similar Datasheet

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More Datasheets from Samsung Semiconductor

Part Number Description
K4S561632B 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S561632D 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S561632E-NC60 SDRAM 256Mb E-die
K4S561632E-NC75 SDRAM 256Mb E-die
K4S561632E-NCL60 SDRAM 256Mb E-die
K4S561632E-NCL75 SDRAM 256Mb E-die
K4S561632E-TC60 256Mb E-die SDRAM Specification
K4S561632E-TC75 256Mb E-die SDRAM Specification
K4S561632E-TL60 256Mb E-die SDRAM Specification
K4S561632E-TL75 256Mb E-die SDRAM Specification

K4S561632A Distributor