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K4S561632D Datasheet 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl

Manufacturer: Samsung Semiconductor

Overview: www.DataSheet4U.com K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL DataSheet4U.com DataShee Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 DataSheet4U.com DataSheet4U.com www.DataSheet4U.com K4S561632D Revision History Revision 0.0 (Jan., 2002) -First generation CMOS SDRAM Revision 0.1(Aug.,2002) - ICC6 of Low power is changed from 1.0 to 1.5 due to typo. et4U.com DataSheet4U.com DataShee Rev. 0.1 Aug. 2002 DataSheet4U.com DataSheet4U.com www.DataSheet4U.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle.

Similar Datasheet

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More Datasheets from Samsung Semiconductor

Part Number Description
K4S561632A 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S561632B 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S561632E-NC60 SDRAM 256Mb E-die
K4S561632E-NC75 SDRAM 256Mb E-die
K4S561632E-NCL60 SDRAM 256Mb E-die
K4S561632E-NCL75 SDRAM 256Mb E-die
K4S561632E-TC60 256Mb E-die SDRAM Specification
K4S561632E-TC75 256Mb E-die SDRAM Specification
K4S561632E-TL60 256Mb E-die SDRAM Specification
K4S561632E-TL75 256Mb E-die SDRAM Specification

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