K4S561632E-NC60 Datasheet | Samsung Semiconductor

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 - Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.0 (August. 2003) - First release. CMOS SDRAM Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -....