K4S56163LC
Description
The K4S56163LC is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
Key Features
- 2.5V power supply
- Four banks operation
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM for masking
- Auto refresh
- 64ms refresh period (8K cycle)
- mercial Temperature Operation (-25° C ~ 70 °C)
