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K4S640832K Datasheet

Manufacturer: Samsung Semiconductor
K4S640832K datasheet preview

K4S640832K Details

Part number K4S640832K
Datasheet K4S640832K K4S641632K Datasheet (PDF)
File Size 211.22 KB
Manufacturer Samsung Semiconductor
Description 64Mb K-die SDRAM
K4S640832K page 2 K4S640832K page 3

K4S640832K Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S640832K Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (4K cycle)

K4S640832K Applications

  • Samsung Electronics reserves the right to change products or specification without notice

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