K4S641632H-UC70 Datasheet | Samsung Semiconductor

FEATURES - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) - All inputs are sampled at the positive going edge of the system clock - Burst read single-bit write operation - DQM (x4,x8) & L(U)DQM (x16) for masking - Auto & self refresh - 64ms refresh period (4K cycle) - Pb-free Package - Ro HS pliant GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S640432H-UC(L)75 K4S640832H-UC(L)75 K4S641632H-UC(L)60 K4S641632H-UC(L)70 K4S641632H-UC(L)75 4Mb x 16 Orgainization 16Mb x 4 8Mb x 8 Max Freq. 133MHz(CL=3) 133MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 16Mx4 8Mx8 4Mx16 Row Address A0~A11 A0~A11 A0~A11 Column Address A0-A9 A0-A8 A0-A7 Row & Column address configuration Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Package Physical Dimension CMOS SDRAM 0~8°C 0.25 TYP 0.010 #54 #28 0.45~0.75 0.018~0.030 0.05 MIN 0.002 ( 0.50 ) 0.020 11.76±0.20 0.463±0.008 #1 22.62 MAX 0.891 22.22 0.875 0.10 MAX 0.004 ( 0.71 ) 0.028 ± 0.10 ± 0.004 #27 0.21 0.008 ± 0.05 ± 0.002 1.00 0.039 ± 0.10 ± 0.004 0.30 -0.05 0.004 0.012 + -0.002 +0.10 0.80 0.0315 54Pin TSOP(II) Package Dimension 10.16 0.400 0.125+0.075 -0.035 0.005+0.003 -0.001...