K4S641632H-UC75 Datasheet PDF - Samsung semiconductor 64Mb H-die SDRAM Specification 54 TSOP-II Specs

K4S641632H-UC75 - 64Mb H-die SDRAM Specification 54 TSOP-II

This page provides the datasheet information for the K4S641632H-UC75, a member of the K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II family.

Datasheet Summary

Description

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms r.

Datasheet Details

Part number	K4S641632H-UC75
Manufacturer	Samsung semiconductor
File Size	146.34 KB
Description	64Mb H-die SDRAM Specification 54 TSOP-II
Datasheet	K4S641632H-UC75 Datasheet
Additional preview pages of the K4S641632H-UC75 datasheet.

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Full PDF Text Transcription

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 1.0 (September, 2003) • Finalized CMOS SDRAM Revision 1.1 (October, 2003) Deleted speed -7C and AC parameter notes 5. Revision 1.2 (May, 2004) • Added Note 5. sentense of tRDL parameter Revision 1.3 (August, 2004) • Corrected typo. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.

Published: Mar 5, 2010 |