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K4X1G323PC-FE

Manufacturer: Samsung Semiconductor

K4X1G323PC-FE datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4X1G323PC-FE datasheet preview

K4X1G323PC-FE Datasheet Details

Part number K4X1G323PC-FE
Datasheet K4X1G323PC-FE K4X1G323PC-L Datasheet (PDF)
File Size 605.18 KB
Manufacturer Samsung Semiconductor
Description 32Mx32 Mobile DDR SDRAM
K4X1G323PC-FE page 2 K4X1G323PC-FE page 3

K4X1G323PC-FE Overview

K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM.

K4X1G323PC-FE Key Features

  • VDD/VDDQ = 1.8V/1.8V
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • MRS cycle with address key programs
  • CAS Latency ( 3 )
  • Burst Length ( 2, 4, 8, 16 )
  • Burst Type (Sequential & Interleave)
  • EMRS cycle with address key programs
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More Datasheets from Samsung Semiconductor

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