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K4X56163PE-LFG Datasheet

Manufacturer: Samsung Semiconductor
K4X56163PE-LFG datasheet preview

Datasheet Details

Part number K4X56163PE-LFG
Datasheet K4X56163PE-LFG_Samsungsemiconductor.pdf
File Size 698.98 KB
Manufacturer Samsung Semiconductor
Description 16M x16 Mobile DDR SDRAM
K4X56163PE-LFG page 2 K4X56163PE-LFG page 3

K4X56163PE-LFG Overview

SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK.

K4X56163PE-LFG Key Features

  • 1.8V power supply, 1.8V I/O power
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • MRS cycle with address key programs
  • CAS Latency ( 3 )
  • Burst Length ( 2, 4, 8 )
  • Burst Type (Sequential & Interleave)
  • Partial Self Refresh Type ( Full, 1/2, 1/4 array )
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K4X56163PI-FE 16Mx16 Mobile DDR SDRAM
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