Part K4X56163PI-FG
Description 16Mx16 Mobile DDR SDRAM
Manufacturer Samsung Semiconductor
Size 564.80 KB
Samsung Semiconductor

K4X56163PI-FG Overview

Key Features

  • VDD/VDDQ = 1.8V/1.8V
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • MRS cycle with address key programs
  • CAS Latency ( 2, 3 )
  • Burst Length ( 2, 4, 8, 16 )
  • Burst Type (Sequential & Interleave)
  • EMRS cycle with address key programs