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K4X56163PI-LG Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4X56163PI-LG datasheet preview

Datasheet Details

Part number K4X56163PI-LG
Datasheet K4X56163PI-LG K4X56163PI-L Datasheet (PDF)
File Size 564.80 KB
Manufacturer Samsung Semiconductor
Description 16Mx16 Mobile DDR SDRAM
K4X56163PI-LG page 2 K4X56163PI-LG page 3

K4X56163PI-LG Overview

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM.

K4X56163PI-LG Key Features

  • VDD/VDDQ = 1.8V/1.8V
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • MRS cycle with address key programs
  • CAS Latency ( 2, 3 )
  • Burst Length ( 2, 4, 8, 16 )
  • Burst Type (Sequential & Interleave)
  • EMRS cycle with address key programs
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More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K4X56163PI-LE 16Mx16 Mobile DDR SDRAM
K4X56163PI-FE 16Mx16 Mobile DDR SDRAM
K4X56163PI-FG 16Mx16 Mobile DDR SDRAM
K4X56163PE 16M x16 Mobile DDR SDRAM
K4X56163PE-LFG 16M x16 Mobile DDR SDRAM
K4X56163PE-LG 16M x16 Mobile DDR SDRAM
K4X56163PG-FE 16M x16 Mobile-DDR SDRAM
K4X56163PG-FG 16M x16 Mobile-DDR SDRAM
K4X56163PG-LE 16M x16 Mobile-DDR SDRAM
K4X56163PG-LG 16M x16 Mobile-DDR SDRAM

K4X56163PI-LG Distributor

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