K6F8016R6B

K6F8016R6B is 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM manufactured by Samsung Semiconductor.

K6F8016R6B Datasheet

Part number	K6F8016R6B
Download	K6F8016R6B Datasheet (PDF)
File Size	141.55 KB
Manufacturer	Samsung Semiconductor
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Related Samsung Semiconductor Datasheets

Part Number	Description
K6F8016R6A	CMOS SRAM
K6F8016R6D	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016T6C	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016U6	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016U6D	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016R6B Distributor

K6F8016R6B Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6F8016R6B Key Features

Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 1.65~2.2V
Low Data Retention Voltage: 1.0V(Min)
Three State Outputs
Package Type: 48-TBGA-6.00x7.00

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