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K6F8016R6B - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 1.65~2.2V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www. DataSheet4U. com.

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Datasheet preview – K6F8016R6B

Datasheet Details

Part number K6F8016R6B
Manufacturer Samsung semiconductor
File Size 141.55 KB
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F8016R6B Datasheet
Additional preview pages of the K6F8016R6B datasheet.

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Full PDF Text Transcription

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K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 October 2001 K6F8016R6B Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 1.65~2.2V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-TBGA-6.
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