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K6F8016R6B - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 1.65~2.2V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www. DataSheet4U. com.

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Full PDF Text Transcription for K6F8016R6B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F8016R6B. For precise diagrams, and layout, please refer to the original PDF.

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0...

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Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 October 2001 K6F8016R6B Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 1.65~2.2V • Low Data Retention Voltage: 1.0

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