Datasheet4U Logo Datasheet4U.com

K6F8016T6C - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Description

The K6F8016T6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 2.7~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-FBGA-6.00x7.00 Preliminary CMOS SRAM www. DataSheet4U. com.

📥 Download Datasheet

Datasheet preview – K6F8016T6C

Datasheet Details

Part number K6F8016T6C
Manufacturer Samsung semiconductor
File Size 154.53 KB
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F8016T6C Datasheet
Additional preview pages of the K6F8016T6C datasheet.

📁 Similar Datasheet

  • K6F1008R2M - SRAM (Samsung Electronics)
  • K6F1008S2M - SRAM (Samsung Electronics)
  • K6F1008V2M - SRAM (Samsung Electronics)
  • K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)
Other Datasheets by Samsung semiconductor
  • K6F8016R6A - CMOS SRAM
  • K6F8016R6B - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F8016R6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F8016U6 - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F8016U6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F8016V3A - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  • K6F1008V2C - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  • K6F1016U4B - CMOS SRAM

Full PDF Text Transcription

Click to expand full text
K6F8016T6C Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 30, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 July 2003 K6F8016T6C Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-FBGA-6.00x7.
Published: |