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K6F8016R6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Description

The K6F8016R6D families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 512K x16.
  • Power Supply Voltage: 1.65~1.95V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-FBGA-6.00x7.00 Preliminary CMOS SRAM www. DataSheet4U. com.

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Datasheet Details

Part number K6F8016R6D
Manufacturer Samsung semiconductor
File Size 180.02 KB
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F8016R6D Datasheet
Additional preview pages of the K6F8016R6D datasheet.

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Full PDF Text Transcription

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K6F8016R6D Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Updated DC parameters (ICC1, ICC2, ISB1, IDR) - Deleted 55ns Speed bin Draft Date April 26, 2004 September 13, 2004 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.1 September 2004 K6F8016R6D Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 1.65~1.
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