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K6R1016V1D Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K6R1016V1D datasheet preview

Datasheet Details

Part number K6R1016V1D
Datasheet K6R1016V1D K6R-1016V Datasheet (PDF)
File Size 259.83 KB
Manufacturer Samsung Semiconductor
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D page 2 K6R1016V1D page 3

K6R1016V1D Overview

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 mon input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB).

K6R1016V1D Key Features

  • Fast Access Time 8,10ns(Max.)
  • Single 3.3V Power Supply
  • TTL patible Inputs and Outputs
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • Center Power/Ground
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