• Part: K7K3218T2C
  • Description: 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 440.01 KB
Download K7K3218T2C Datasheet PDF
Samsung Semiconductor
K7K3218T2C
K7K3218T2C is 1Mx36 & 2Mx18 DDRII CIO b2 SRAM manufactured by Samsung Semiconductor.
FEATURES - 1.8V+0.1V/-0.1V Power Supply. - DLL circuitry for wide output data valid window and future freguency scaling. - I/O Supply Voltage 1.5V+0.1V/-0.1V - Pipelined, double-data rate operation. - mon data input/output bus . - HSTL I/O - Full data coherency, providing most current data. - Synchronous pipeline read with self timed late write. - Read latency : 2 clock cycles - Registered address, control and data input/output. - DDR(Double Data Rate) Interface on read and write ports. - Fixed 2-bit burst for both read and write operation. - Clock-stop supports to reduce current. - Two input clocks(K and K) for accurate DDR timing at clock rising edges only. - Two echo clocks (CQ and CQ) to enhance output data traceability. - Data Valid pin(QVLD) supported - Single...