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K7K3236T2C Datasheet 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

Manufacturer: Samsung Semiconductor

Overview: K7K3236T2C K7K3218T2C 1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM 36Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

Download the K7K3236T2C datasheet PDF. This datasheet also includes the K7K3218T2C variant, as both parts are published together in a single manufacturer document.

Key Features

  • 1.8V+0.1V/-0.1V Power Supply.
  • DLL circuitry for wide output data valid window and future freguency scaling.
  • I/O Supply Voltage 1.5V+0.1V/-0.1V.
  • Pipelined, double-data rate operation.
  • Common data input/output bus.
  • HSTL I/O.
  • Full data coherency, providing most current data.
  • Synchronous pipeline read with self timed late write.
  • Read latency : 2 clock cycles.
  • Registered address, control and data input/o.

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