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K7R641882M Datasheet

Manufacturer: Samsung Semiconductor
K7R641882M datasheet preview

Datasheet Details

Part number K7R641882M
Datasheet K7R641882M_Samsungsemiconductor.pdf
File Size 364.61 KB
Manufacturer Samsung Semiconductor
Description 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
K7R641882M page 2 K7R641882M page 3

K7R641882M Overview

Update AC timing characteristics. Change the JTAG instruction coding. Change the AC timing characteristics.

K7R641882M Key Features

  • 1.8V+0.1V/-0.1V Power Supply
  • DLL circuitry for wide output data valid window and future freguency scaling
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed early write
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 2-bit burst for both read and write operation
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