• Part: K8D638UBM
  • Description: (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 665.39 KB
Download K8D638UBM Datasheet PDF
K8D638UBM datasheet preview
K8D638UBM page 2
Page 2
K8D638UBM page 3
Page 3

K8D638UBM Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations
  • Fast Read Access Time : 70ns
  • Read While Program/Erase Operation
  • Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb
  • Secode(Security Code) Block : Extra 64K Byte block
  • Power Consumption (typical value @5MHz)
  • Read Current : 14mA
  • Program/Erase Current : 15mA
  • Read While Program or Read While Erase Current : 25mA
  • Standby Mode/Auto Sleep Mode : 10µA

Related Samsung Semiconductor Datasheets

Part Number Description
K8D638UTM (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UBM (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UTM (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D1716UBC 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory