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K9F4G08U0A - (K9xxG08UxA) FLASH MEMORY

Product Overview

Samsung semiconductor

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K9F4G08U0A (K9xxG08UxA) FLASH MEMORY by Samsung semiconductor - Datasheet Preview — Datasheet preview – K9F4G08U0A

Datasheet Details

Part number	K9F4G08U0A
Manufacturer	Samsung semiconductor
File Size	1.18 MB
Description	(K9xxG08UxA) FLASH MEMORY
Datasheet	K9F4G08U0A Datasheet
Additional preview pages of the K9F4G08U0A datasheet.

Product details

Description

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit.

Features

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Multiplexed I/.

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Other Datasheets by Samsung semiconductor

K9F4G08U0M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
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Published: Jan 22, 2008 |