K9F4G08U0F Datasheet | Samsung Semiconductor

SAMSUNG CONFIDENTIAL Rev. 1.2, Jul. 2016 K9F4G08U0F K9K8G08U0F K9WAG08U1F 4Gb F-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2016 Samsung Electronics Co., Ltd. All rights reserved. -1- K9F4G08U0F K9K8G08U0F K9WAG08U1F Revision History datasheet SAMSUNG CONFIDENTIAL Rev. 1.2 FLASH MEMORY Revision No. History 0.0 1. Initial issue 1.0 1. Chapter 5.10 ECC Read Status revised. 2. Chapter 5.11 ECC Sector Information revised. 3. Chapter 5.12 Partial Page Program Information added. 4. Typo corrected. 1.1 1. PKG(63 FBGA) added. 2. Typo corrected. 1.11 1. Typo corrected. 1.2 1. Figure 7. AC Waveform for Power Transition revised Draft Date Remark Edited by Reviewed by Jul. 08, 2015 Target H.K.Kim T.E.Kim Dec. 29, 2015 Final H.K.Kim T.E.Kim Mar, 14. 2016 Final H.K.Kim T.E.Kim Mar, 29. 2016 Jul. 26. 2016 Final Final S.M.Lee T.Y.Kim T.E.Kim S.J.Kim -2- K9F4G08...