Datasheet4U.com

K9F4G08U0M Datasheet 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K9F4G08U0M datasheet preview

Datasheet Details

Part number	K9F4G08U0M
Manufacturer	Samsung Semiconductor
File Size	1.11 MB
Description	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Datasheet	K9F4G08U0M_Samsungsemiconductor.pdf

Key Features

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Multiplexed I.

K9F4G08U0B from other manufacturers

Brand Logo	Part Number	Description	Other Manufacturers
	K9F4G08U0B	FLASH MEMORY	Samsung
	K9F4G08U0D	4Gb D-die NAND Flash	Samsung
	K9F4G08U0E	4Gb E-die NAND Flash	Samsung
	K9F4G08U0F	4Gb F-die NAND Flash	Samsung

More Datasheets from Samsung Semiconductor

Part Number	Description
K9F4G08U0A	(K9xxG08UxA) FLASH MEMORY
K9F4G08U1M	512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F4008W0A-TCB0	512K x 8 bit NAND Flash Memory
K9F4008W0A-TIB0	512K x 8 bit NAND Flash Memory
K9F1208B0B	64M x 8 Bit NAND Flash Memory
K9F1208B0C	FLASH MEMORY
K9F1208D0A	NAND Flash Memory
K9F1208D0B	64M x 8 Bit NAND Flash Memory
K9F1208D0B-D	64M x 8 Bit NAND Flash Memory
K9F1208D0B-Y	64M x 8 Bit NAND Flash Memory

K9F4G08U0M Distributor