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K9F4G08U0B - FLASH MEMORY

This page provides the datasheet information for the K9F4G08U0B, a member of the K9K8G08U1B FLASH MEMORY family.

Datasheet Summary

Description

Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid st ate application market.

Features

  • Voltage Supply - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Datasheet preview – K9F4G08U0B

Datasheet Details

Part number K9F4G08U0B
Manufacturer Samsung
File Size 1.19 MB
Description FLASH MEMORY
Datasheet download datasheet K9F4G08U0B Datasheet
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Full PDF Text Transcription

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K9K8G08U1B K9F4G08U0B K9F4G08B0B Advance FLASH MEMORY K9XXG08XXB INFORMATION IN THIS D OCUMENT IS PROVID ED IN RELA TION T O SA MSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRU ED AS GR ANTING ANY EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, LICENSE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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