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K9F4G08U1M Datasheet 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory

Manufacturer: Samsung Semiconductor

Overview: .. K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance .. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 .. K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY 512M x 8 Bit / 1G x 8 Bits NAND Flash Memory PRODUCT LIST Part Number K9F4G08U0M-Y,P K9F4G08U0M-I K9K8G08U1M-I 2.70 ~ 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit.

Its

Key Features

  • Voltage Supply - 2.70V ~ 3.60V.
  • Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
  • Command/Address/Data Mult.

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