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K9F4G08U1M - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

This page provides the datasheet information for the K9F4G08U1M, a member of the K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory family.

Datasheet Summary

Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Features

  • Voltage Supply - 2.70V ~ 3.60V.
  • Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
  • Command/Address/Data Mult.

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Datasheet preview – K9F4G08U1M

Datasheet Details

Part number K9F4G08U1M
Manufacturer Samsung semiconductor
File Size 1.11 MB
Description 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Datasheet download datasheet K9F4G08U1M Datasheet
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www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance www.DataSheet4U.com The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 1 www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY 512M x 8 Bit / 1G x 8 Bits NAND Flash Memory PRODUCT LIST Part Number K9F4G08U0M-Y,P K9F4G08U0M-I K9K8G08U1M-I 2.70 ~ 3.
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