• Part: K9F4G08U1M
  • Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 1.11 MB
Download K9F4G08U1M Datasheet PDF
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K9F4G08U1M Key Features

  • Voltage Supply
  • 2.70V ~ 3.60V
  • Organization
  • Memory Cell Array : (512M + 16,384K)bit x 8bit
  • Data Register : (2K + 64)bit x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
  • Page Read Operation
  • Page Size : (2K + 64)Byte

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