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K9F5608UOC - (K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

General Description

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity.

The device is offered in 1.8V, 2.65V, 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Key Features

  • and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached datasheets are prepared and approved by.

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📁 Similar Datasheet

Part Number Description Manufacturer
K9F5608U0C NAND Flash Memory Samsung
K9F5608D0C NAND Flash Memory Samsung
K9F5608Q0C NAND Flash Memory Samsung
K9F5608Q0C-DCB0 1.8V NAND Flash Errata Samsung
K9F5608Q0C-DIB0 1.8V NAND Flash Errata Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K9F5608U0 32M x 8 Bit NAND Flash Memory
K9F5608U0A 32M x 8 Bit NAND Flash Memory
K9F5608U0A-YCB0 32M x 8 Bit NAND Flash Memory
K9F5608U0A-YIB0 32M x 8 Bit NAND Flash Memory
K9F5608U0B 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory www.datasheet4u.com Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 6. Pin assignment of WSOP #38 pin is changed. (before) LOCKPRE --> (after) N.C 2.0 1. The Maximum operating current is changed. Program : Icc2 20mA-->25mA Erase : Icc3 20mA-->25mA The min. Vcc value 1.