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K9F6408U0M-TIB0 Datasheet 8M x 8 Bit NAND Flash Memory

Manufacturer: Samsung Semiconductor

Download the K9F6408U0M-TIB0 datasheet PDF. This datasheet also includes the K9F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K9F-6408U.pdf) that lists specifications for multiple related part numbers.

General Description

The K9F6408U0M is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

A program operation programs the 528-byte page in typically 200 µs and an erase operation can be performed in typically 2ms on

Overview

K9F6408U0M-TCB0, K9F6408U0M-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.

History 0.0 1.0 1.1 Initial issue.

Data Sheet, 1998 Data Sheet.

Key Features

  • Voltage Supply : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte.
  • 528-Byte Page Read Operation - Random Access : 7µs(Max. ) - Serial Page Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 200 µs(typ. ) - Block Erase time : 2ms(typ. ).
  • Command/Address/Data Multiplexed I/O port.

More Datasheets from Samsung Semiconductor

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