K9F6408U0B-TCB0
K9F6408U0B-TCB0 is 8M x 8 Bit NAND Flash Memory manufactured by Samsung Semiconductor.
K9F6408U0B-TCB0, K9F6408U0B-TIB0
Document Title
8M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
Initial issue.
1. Changed endurance : 1 million -> 100K program/erase cycles
Draft Date
July 17th 2000
1. Changed don’t care mode in address cycles
- - X can be "High" or "Low" =>
- L must be set to "Low"
Nov. 20th 2000
2. Explain how pointer operation works in detail.
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high, the spare area is not accessible for reading or programming. SE is rec ommended to be coupled to GND or Vcc and should not be toggled during reading...
