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K9F6408U0B-TIB0

Manufacturer: Samsung Semiconductor

K9F6408U0B-TIB0 datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K9F6408U0B-TIB0 datasheet preview

K9F6408U0B-TIB0 Datasheet Details

Part number K9F6408U0B-TIB0
Datasheet K9F6408U0B-TIB0 K9F6408U0B-TCB0 Datasheet (PDF)
File Size 416.02 KB
Manufacturer Samsung Semiconductor
Description 8M x 8 Bit NAND Flash Memory
K9F6408U0B-TIB0 page 2 K9F6408U0B-TIB0 page 3

K9F6408U0B-TIB0 Overview

The K9F6408U0B is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200µs and an erase operation can be performed in typical 2ms on an 8K-byte block.

K9F6408U0B-TIB0 Key Features

  • Voltage Supply : 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (8M + 256K)bit x 8bit
  • Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (8K + 256)Byte
  • 528-Byte Page Read Operation
  • Random Access : 10µs(Max.)
  • Serial Page Access : 50ns(Min.)
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