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K9K1208U0M-YCB0 Datasheet

Manufacturer: Samsung Semiconductor
K9K1208U0M-YCB0 datasheet preview

Datasheet Details

Part number K9K1208U0M-YCB0
Datasheet K9K1208U0M-YCB0_Samsungsemiconductor.pdf
File Size 354.28 KB
Manufacturer Samsung Semiconductor
Description 64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 page 2 K9K1208U0M-YCB0 page 3

K9K1208U0M-YCB0 Overview

SE is remended to coupled to GND or Vcc and should not be toggled during reading or programming. Changed don’ t care mode in address cycles - X can be "High" or "Low" => L must be set to "Low" 2. Explain how pointer operation works in detail.

K9K1208U0M-YCB0 Key Features

  • Voltage Supply : 2.7V~3.6V
  • Organization
  • Memory Cell Array : (64M + 2,048K)bit x 8bit
  • Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (16K + 512)Byte
  • 528-Byte Page Read Operation
  • Random Access : 10µs(Max.)
  • Serial Page Access : 60ns(Min.)
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