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K9K1208U0M - 64M x 8 Bit NAND Flash Memory

Description

Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity.

The device is offered in 1.8V, 2.65V, 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached datasheets are prepared and approved by.

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Datasheet preview – K9K1208U0M

Datasheet Details

Part number K9K1208U0M
Manufacturer Samsung semiconductor
File Size 953.79 KB
Description 64M x 8 Bit NAND Flash Memory
Datasheet download datasheet K9K1208U0M Datasheet
Additional preview pages of the K9K1208U0M datasheet.

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Full PDF Text Transcription

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K9K1208Q0C K9K1208D0C K9K1208U0C K9K1216Q0C K9K1216D0C K9K1216U0C FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 35) 4. Add the specification of Block Lock scheme.(Page 29~32) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 2.0 1. The Maximum operating current is changed. Read : Icc1 20mA-->30mA Program : Icc2 20mA-->40mA Erase : Icc3 20mA-->40mA The min. Vcc value 1.8V devices is changed. K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.
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