KM4132G512A Datasheet | Samsung Semiconductor

FEATURES 3.3V power supply LVTTL patible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) - All inputs are sampled at the positive going edge of the system clock - Burst Read Single-bit Write operation - DQM 0-3 for byte masking - Auto & self refresh .. - 32ms refresh period (2K cycle) - 100 Pin PQFP, TQFP (14 x 20 mm) - - - - GENERAL DESCRIPTION The KM4132G512A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 262,144 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length, and programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. Write per bit and 8 columns block write improves performance in graphics systems. ORDERING INFORMATION Part NO. KM4132G512AQ-5/F5 KM4132G512AQ-C/FC KM4132G512AQ-6/F6 KM4132G512AQ-7/F7 KM4132G512AQ-8/F8 KM4132G512ATQ-5/F5 KM4132G512ATQ-C/FC KM4132G512ATQ-6/F6 KM4132G512ATQ-7/F7 KM4132G512ATQ-8/F8 Max Freq. 200MHz 183MHz 166MHz 143MHz 125MHz 200MHz 183MHz 166MHz 143MHz 125MHz Interface Package Graphics Features - SMRS cycle. -. Load mask register -. Load color register - Write Per Bit(Old Mask) - Block Write(8 Columns) LVTTL 100 PQFP LVTTL 100 TQFP FUNCTIONAL BLOCK DIAGRAM DQMi...