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MR18R162GAF0 Datasheet

(mr18r1622(4/8/g)af0) (16mx16)x2(4/8/16)pcs Rimm Module Based On 256mb A-die

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

MR18R162GAF0 Overview

MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) First copy. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits.

MR18R162GAF0 Key Features

  • CN9 -CM8 -CK8
  • High speed up to 1066 MHz RDRAM storage
  • 184 edge connector pads with 1mm pad spacing
  • Module PCB size : 133.35mm x 31.75mm x 1.27mm
  • 256Mb base RIMM Module
  • Module PCB size : 133.35mm x 34.93mm x 1.27mm
  • 288Mb base RIMM Module
  • Each RDRAM device has 32 banks, for a total of 512, 256

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MR18R162GDF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R162GDF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624GEG0 Key Timing Parameters
MR18R1628DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters

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