Datasheet4U Logo Datasheet4U.com

K4E151611C - 1M x 16Bit CMOS Dynamic RAM

Download the K4E151611C datasheet PDF. This datasheet also covers the K4E171611C variant, as both devices belong to the same 1m x 16bit cmos dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4E171611C-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4E151611C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4E151611C. For precise diagrams, and layout, please refer to the original PDF.

K4E171611C, K4E151611C K4E171612C, K4E151612C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Dat...

View more extracted text
ta Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version.

More Datasheets from Samsung Semiconductor

Part Number Description
K4E151611D 1M x 16Bit CMOS Dynamic RAM
K4E151612C 1M x 16Bit CMOS Dynamic RAM
K4E151612D 1M x 16Bit CMOS Dynamic RAM
K4E160411D 4M x 4Bit CMOS Dynamic RAM
K4E160412D 4M x 4Bit CMOS Dynamic RAM
K4E160811D 2M x 8Bit CMOS Dynamic RAM
K4E160812D 2M x 8Bit CMOS Dynamic RAM
K4E170411D 4M x 4Bit CMOS Dynamic RAM
K4E170412D 4M x 4Bit CMOS Dynamic RAM
K4E170811D 2M x 8Bit CMOS Dynamic RAM