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K4E160411D - 4M x 4Bit CMOS Dynamic RAM

Description

This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer.

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Datasheet preview – K4E160411D

Datasheet Details

Part number K4E160411D
Manufacturer Samsung
File Size 256.75 KB
Description 4M x 4Bit CMOS Dynamic RAM
Datasheet download datasheet K4E160411D Datasheet
Additional preview pages of the K4E160411D datasheet.

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Full PDF Text Transcription

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K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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