K4E160812D Overview
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.
K4E160812D Key Features
- Part Identification
- K4E170811D-B(F) (5V, 4K Ref.)
- K4E160811D-B(F) (5V, 2K Ref.)
- K4E170812D-B(F) (3.3V, 4K Ref.)
- K4E160812D-B(F) (3.3V, 2K Ref.)
- Extended Data Out Mode operation (Fast page mode with Extended Data Out)
- CAS-before-RAS refresh capability
- RAS-only and Hidden refresh capability
- Self-refresh capability (L-ver only)
- Fast parallel test mode capability