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K4E151611D - 1M x 16Bit CMOS Dynamic RAM

Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

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Datasheet preview – K4E151611D

Datasheet Details

Part number K4E151611D
Manufacturer Samsung
File Size 553.93 KB
Description 1M x 16Bit CMOS Dynamic RAM
Datasheet download datasheet K4E151611D Datasheet
Additional preview pages of the K4E151611D datasheet.

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Full PDF Text Transcription

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K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version.
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