K4E151611D Description
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.
K4E151611D Key Features
- Part Identification
- K4E171611D-J(T) (5V, 4K Ref.)
- K4E151611D-J(T) (5V, 1K Ref.)
- K4E171612D-J(T) (3.3V, 4K Ref.)
- K4E151612D-J(T) (3.3V, 1K Ref.)
- Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
- 2 CAS Byte/Word Read/Write operation
- CAS-before-RAS refresh capability
- RAS-only and Hidden refresh capability
- Self-refresh capability (L-ver only)