K4E170411D Datasheet (4M x 4Bit CMOS Dynamic RAM)

Part: K4E170411D
Manufacturer: Samsung Semiconductor
Size: 256.75 KB

K4E170411D Key Features

Part Identification
K4E170411D-B(F) (5V, 4K Ref.)
K4E160411D-B(F) (5V, 2K Ref.)
K4E170412D-B(F) (3.3V, 4K Ref.)
K4E160412D-B(F) (3.3V, 2K Ref.)
Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability

Related Samsung Semiconductor Datasheets

Part Number	Description
K4E170412D	4M x 4Bit CMOS Dynamic RAM
K4E170811D	2M x 8Bit CMOS Dynamic RAM
K4E170812D	2M x 8Bit CMOS Dynamic RAM
K4E171611C	1M x 16Bit CMOS Dynamic RAM
K4E171611D	1M x 16Bit CMOS Dynamic RAM

K4E170411D Description

This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.